MBE Growth for Electronic and Photonic Device Applications
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Published on 1995 by
The goal of this research was to improve our understanding of MBE growth and to apply this understanding to practical devices for electronic and optoelectronic applications.
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The goal of this research was to improve our understanding of MBE growth and to apply this understanding to practical devices for electronic and optoelectronic applications. We studied semiconductor quantum wells (QWs), achievable through control of layer thickness with monolayer accuracy, and distributed Bragg reflectors (DBRs) with high reflectivity designed for specific wavelengths. We developed microcavities for both light emitters and detectors, which have resonant cavities on the order of a single wavelength of light. The resonant-cavity photodiode structure in effect decouples the quantum efficiency from the transit-time. Lasers and detectors employing such resonant cavities on the wavelength scale will play an important role in a variety of future optoelectronic applications, and for optical interconnects.
This Book was ranked 8 by Google Books for keyword Electronic and Photonic Devices.
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