Ultrafast Optical Electronics Center

Ultrafast Optical Electronics Center
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Published on 1990 by

The work done under the URI had the mission to bridge ultrafast optics with high-speed electronic and photonics.

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The work done under the URI had the mission to bridge ultrafast optics with high-speed electronic and photonics. Ultrashort optical pulses have been used to study of fundamental processes taking place in the femtosecond and picosecond timescales in bulk and layered semiconductors, metals, and superconductors. Under this contract electron velocity overshoot in GaAs was time-resolved for the first time. Using short optical and electrical pulses, both sequential and resonant tunneling transport were investigated. The high- frequency properties of high-Tc superconductors in the 10-100 GHz range were studied. Time-resolved thermo-modulation was used to investigate the electron phonon interaction in metals. This URI also had an important technological impact. Novel techniques and devices were demonstrated. In particular, time- domain reflectometry, based on electrooptic sampling to test devices and circuits at room and cryogenic temperatures was developed. We test HEMT, PBT, heterostructure transistor prescaler, NMOS silicon multiplexer, and GaAs power amplifier MMIC. Broadband electronic requires a complete understanding of normal and superconducting transmission lines. Extensive work has been done in this area. A time-temperature of the first high-energy electron diffraction technique was also demonstrated and used to determine the surface temperature of the first monolayers in crystals. (Author) (kr).

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